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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.4 MAX. 1500 700 8 15 125 1.0 0.6 UNIT V V A A W V A s
Tmb 25 C IC = 4.5 A; IB = 1.12 A f=16kHz ICsat = 4.5 A;f=16kHz
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 700 8 15 4 6 100 5 125 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.12 A IC = 4.5 A; IB = 1.7 A IC = 100 mA;VCE = 5 V IC = 4.5 A;VCE = 1 V
MIN. 7.5 700 4
TYP. 13.5 13 5.5
MAX. 1.0 2.0 1.0 1.0 1.1 7.0
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (38 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) 4.7 0.25 5.7 0.35 s s TYP. 80 MAX. UNIT pF s s
ts tf
5.0 0.4
6.0 0.6
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
BU2508A IC DIODE
ICsat
100
h FE
t
5V
IB
IBend
10
t 20us 26us 64us VCE
Tj = 25 C Tj = 125 C
1V
1 0.01
t
0.1 IC / A
1
10
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
ICsat 90 % IC
1.2 1.1 1 0.9
VBESAT / V
Tj = 25 C Tj = 125 C
BU2508A
10 % tf ts IB IBend
0.8
t
0.7 0.6
IC/IB= 3 4 5
t
0.5 0.4 0.1 1 IC / A 10
- IBM
Fig.4. Switching times definitions.
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
+ 150 v nominal adjust for ICsat
1 0.9 0.8 0.7 0.6 0.5 0.4
VCESAT / V IC/IB= 5 4 3
Tj = 25 C Tj = 125 C
BU2508A
1mH
IBend
LB
BU2508A 12nF
BY228
0.3 0.2 0.1 0 0.1 1 IC / A 10
-VBB
Fig.5. Switching times test circuit (BU2508A).
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
1.2 1.1 1 0.9 0.8 0.7 0.6
VBESAT / V
Tj = 25 C Tj = 125 C
BU2508A
IC= 6A 4.5A 3A 2A
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us
BU2508A ts
IC = 4.5A 3.5A tf 0.1 1 IB / A 10
0
1
2 IB / A
3
4
Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V BU2508A
Tj = 25 C Tj = 125 C
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
Zth / (K/W)
10
10
6A 4.5A 1 3A IC=2A 0.1
1 0.5 0.2 0.1 0.05 0.02 D=0
0.1
P D
tp
D=
tp T t
T
0.1
1 IB / A
10
0.01 1E-06
1E-04 t/s
1E-02
1E+00
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ BU2508A
Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
PD% Normalised Power Derating
1000
120 110 100 90 80 70 60 50 40 30 20 10
IC = 4.5A 3.5A 100
10
0.1
1 IB / A
10
0 0 20 40 60 80 100 Tmb / C 120 140
Fig.11. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 16 kHz
Fig.14. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
100
IC / A
= 0.01
ICM max 10 IC max
(1) II
tp = 5 us 10 20
I
50 100 200 500
1
(2)
1 ms 2 5 10 20 DC
0.1
0.01 1 10 100 VCE / V 1000
Fig.15. Forward bias safe operating area. Tmb = 25C (1) Ptot max line. (2) Second-breakdown limits (independent of temperature). I Region of DC operation. II Extension for repetitive pulse operation.
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.16. SOT429; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
7
Rev 1.100

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